Adil Mahmood MALIK

Objectives:
To pursue a good career in physics, plasma nanotechnology, device fabrication and its utillization in Information technology and in industrial automation.

Education Background

2005 - 2008       

PhD research on nano-isolation layers, in the University of Tuebingen, Germany

2004 - 2005       

Research scientist. Project "Fabrication of Organic Field Effect Transistors". Stuttgart University, Germany

2002 - 2003

M.Sc. Thesis, "Technology and Physics of Gate Recessed GaN/AlGaN HFET"

2001

2nd position in M.Sc. Physics, Punjab University, Lahore, Pakistan.

Professional Experience
June 2005 - Now
- Working on a project for the Retina Implants.
- Plasma Enhanced Chemical Vapour Deposition
- Plasma - Parylene Deposition System
- Water Vapor Transmission Measurement

- FIB-SEM

- QMS

- Clean room technology

- ...

April 2003 – Jan. 2005

Research work in Microstructure LAB, 4th Physics Institute, Stuttgart University, Germany
- DFG project “Organic Field Effect Transistors”.
- The technological improvements and Physics of Encapsulated Thiophene (ECnT) based OFETs sublimated in Ultra High Vacuum Chamber.
- The in-situ and ex-situ electronic characterization of device fabricated.
- Analysis and interpretation of the acquired data/results, e.g., electron transport phenomenon in organic transistors.
- Construction of UHV chamber, maintenance, and controlling of the experimental apparatus and associated vacuum components.
- Photolithography, thin film evaporation for the electrical contacts.

Feb. 2002 – Feb. 2003

M.Sc. Research work in Microstructure LAB, 4th Physics institute, Stuttgart University, Germany
- DFG Project “Wide band gap Semiconductor GaN”
- M.Sc. Thesis title, “Technology and Physics of Gate Recessed GaN/AlGaN HFETs”
- Photolithographic processing with KarlSuss Mask Aligner MJB3
- Metallization techniques for the electrical contacts (Cr/Ni/Au-Thin film evaporation), Etching with ECR-RIE
- Thermal Annealing for the metallization with RTA (Rapid Thermal Annealer)
- Scanning Electron Microscopy with Hitachi S800
- Electronic characterization of the transistors with 4 probe station setup connected with Semiconductor Parameter Analyzer HP 4145B and Kiethley 4200-Semiconductor Characterization System
- Mathematical simulation for the electronic characteristics of the fabricated transistors with MAPLE 6 and ORIGIN 7.5

Dec.2001 – Mar. 2002

Research Assistant in 1st Physics Institute, Stuttgart University
- Measurement of electronic properties, i.e., DC Resistance Measurements of Si:P (Silicon Phosphide with different doping concentrations in 1018 cm-3 regime) at helium temperatures. 1.5 K, with Lakeshore Resistance Temperature Sensor.
- Data Acquisition and interpretation using LabVIEW and Microsoft Origin.